ISBN: 88-8305-007-X
e-ISBN: 88-8305-008-8
The 10th edition of the "European Workshop on Metalorganic Vapour Phase Epitaxy", held at the University of Lecce Ecotekne Congress Center, has been organised by the Dept. of Innovation Engineering of the University and by the Lecce Section of the CNR Institute for Microelectronics and Microsystems (IMM - CNR). Both Institutions have been deeply involved in MOVPE since the last 15 years, with a substantial growth of scientific interests and activities in the last few years. Current researches at Lecce span now through almost all classes of semiconducting compounds and structures for both opto- and micor-electronics and photonics. Lecce could be thus regarded as one of the MOVPE 'poles' of Italy.
| One-dimensional assembly of quantum dots and heterostructures |
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L. Samuelson |
1-2 |
| Magnetic Properties of Mn-Doped III-Nitrides Grown by MOCVD |
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S. M. Bedair |
3-6 |
| MOCVD growth of ZnO films |
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R. Triboulet |
7-12 |
| GaAs based lasers for telecommunication |
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A. Forchel |
13-14 |
| InP-based materials for optoelectronic devices: old issues and new challenges for MOVPE” |
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D. Bertone |
15-16 |
| LP-MOVPE growth for high-speed electronic devices on InP |
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W. Prost |
17-22 |
| MOVPE of diluted nitride III/V-compounds |
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W. Stolz |
23-24 |
| Epitaxial growth and device fabrication of GaN based electronic and optoelectronic structures |
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S. Mueller |
25-30 |
| Growth and characterization of high efficiency III-V multi-junction solar cells for terrestrial and space applications |
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J.M. Olson |
31-36 |
| Size and shape controlled GaAs nanowhiskers grown by MOVPE |
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M. Borgström, T. Mårtensson, M. Karlsson, A. Persson, J. Ohlsson, K. Deppert, W. Seifert, L. Samuelson |
37-40 |
| Investigation of GaAs nanowires grown via MOVPE using the Vapour-Liquid-Solid technique |
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Bhattacharya, R. Banerjee, R. Ratan, S. Kar, M.R. Gokhale, A.P. Shah, J. Bhattacharyya, K.L. Narasimhan, B.M. Arora |
41-44 |
| Real-time control of quantum dot laser growth by reflectance anisotropy spectroscopy |
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U. W. Pohl, I. Kaiander, C. Kaspari, S. Weeke, R. L. Sellin, J.-T. Zettler, D. Bimberg, W. Richter |
45-48 |
| Monolayer splitting for InAs/GaAs quantum dots |
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K. Pötschke, L. Müller-Kirsch, R. Heitz, R.L. Sellin, U.W. Pohl, D. Bimberg, N. Zakharov, P. Werner |
49-50 |
| Growth of GaAs and InAs quantum dots by metalorganic sources of hyperthermal energies |
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M. Ozeki, Y. Shimizu |
51-54 |
| MOVPE prepared self-organised InAs/GaAs mono- and multi-layer quantum dot structures: magneto-photoluminescence study of electronic transitions |
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A. Hospodková, K. Kuldová, J. Oswald, E. Hulicius, J. Pangrác, T. Simecek, I. Vávra |
55-58 |
| Alternative-precursor growth of InGaAs/GaAs quantum dots for laser applications |
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R. L. Sellin, I. Kaiander, U. W. Pohl, D. Bimberg |
59-60 |
| Spontaneous quantum dot formation due to strain induced phase segregation of GaInAs |
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M. Borgström, A. Mikkelsen, E. Lundgren, L. Outtara, L. Samuelson, W. Seifert |
61-64 |
| Morphological characterization of InGaAs QDs MOCVD-grown in nitrogen atmosphere |
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V. Tasco, M. A. Signore, C. Pascali, I. Tarantini, A. Passaseo, R. Cingolani |
65-66 |
| InAs quantum dots grown on InAlGaAs lattice matched to InP |
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M. Borgström, M.P. Pires, T. Bryllert, S. Landi, W. Seifert, P.L. Souza |
67-70 |
| Dense arrays of semiconductor quantum dots with controlled positions grown in inverted pyramids |
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E. Pelucchi, S. Watanabe, B. Dwir, K. Leifer, E. Kapon |
71-74 |
| Preparation of GaN quantum dots by MOVPE |
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Takao Nagatomo, Takayuki Nishino, Minoru Abasaki, Ryuhei Inazawa |
75-78 |
| Aluminum nanoparticles embedded into GaAs: deposition and epitaxial overgrowth by MOCVD |
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V. Shashkin, V. Daniltsev, M. Drozdov, Yu. Drozdov, A. Murel, N. Vostokov, S. Rushworth |
79-84 |
| MOVPE growth of high-quality ZnO |
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N. Oleynik, A. Dadgar, D. Forster, F. Bertram, S. Deiter, J. Bläsing, U. Haboeck, A. Diez, A. Hoffmann, M. Seip, A. Greiling, J. Christen, A. Krost |
85-86 |
| MOCVD deposition of Zinc Oxide using diethylzinc and n-butanol |
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D. A. Lamb, S. J. C. Irvine |
87-90 |
| Atmospheric pressure MOCVD of highly conductive thin films of CdO |
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D. M. Ellis, S. J. C. Irvine |
91-94 |
| ZnO growth by MOCVD: numerical study |
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R. Tena-Zaera, J. Zúñiga-Pérez, C. Martínez-Tomás, V. Muñoz-Sanjosé |
95-98 |
| Investigation of ZnTe homoepitaxial layers grown by metalorganic vapour phase epitaxy on VGF-grown (100)ZnTe:P wafers |
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M. Traversa, N. Lovergine, P. Prete, K. Yoshino, M. Ozeki, T. Di Luccio, M. Pentimalli, A. Cappello, L. Tapfer, A. M. Mancini |
99-102 |
| Nonequilibrium carrier dynamics in MOVPE-grown homoepitaxial ZnTe layers and substrate material |
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R. Aleksiejunas, T. Malinauskas, M. Sudzius, K. Jarasiunas, N. Lovergine, M. Traversa, P. Prete, A. M. Mancini |
103-106 |
| E-beam longitudinal pumped laser on MOVPE-grown hexagonal CdSSe/CdS MQW structure |
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V. I. Kozlovsky, V. Yu. Bondarev, D. A. Sannikov, P. I. Kuznetsov, V.A. Jitov, G. G. Yakushcheva, L. Yu. Zakharov, K.P. O’Donnell, C. Trager-Cowan |
107-110 |
| Doping efficiency of Sb in ZnSe grown by MOVPE |
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Toshiyuki Ido, Hideo Goto |
111-114 |
| MOVPE growth and DLTS study of Mn-doped ZnSe |
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Toshiyuki Ido, Yuri Sawada, Hideo Goto |
115-118 |
| Growth and characterization of Sb-doped Cdx Mn1-x Te grown by MOVPE |
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Hideo Goto, Takaya Sakuma, Satomi Sawada, Toshiyuki Ido |
119-122 |
| Studies on InP:Fe growth in a close-spaced showerhead MOVPE reactor |
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David Söderström, Gerardo Fornuto, Aurelio Buccieri |
153-156 |
| Interlayer formation due to arsine stabilisation during interruptions of MOVPE-growth of InGaP |
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A. Knauer, P. Krispin, U. Zeimer, H. Kissel, M. Weyers |
157-160 |
| Influence of ordered and random part on properties of InGaP alloy grown by MOVPE |
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J. Novák, S. Hasenöhrl, M. I. Alonso, M. Garriga |
161-162 |
| Temperature dependent magnetoresistance characterization of ordered strained InGaP grown by MOVPE |
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S. Hasenöhrl, J. Betko, M. Morvic, J. Novák, J. Fedor |
163-166 |
| Carbon doping of AlGaAs using CBr4 in a nitrogen environment |
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Alok Rudra, Klaus Leifer, Aicha Hessler, Eli Kapon |
175-176 |
| Si- and Zn-doping of lattice matched BxInzGa1-x-zAs- and InxGa1-xNyAs1-y-layers |
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Gunnar Leibiger, Claudia Krahmer, Volker Gottschalch, Gabriele Benndorf, Volker Riede |
177-180 |
| Properties of vanadium-doped GaAs grown by MOVPE |
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A. Bchetnia, A. Rebey, J. C. Bourgoin, J. Cenogora, JL. Fave, B. Eljani |
181-182 |
| Comparison of CBr4 and DTBSi as precursors for p-type doping of GaSb |
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Z. Kollonitsch, K. Möller, C. Giesen, M. Heuken, F. Willig, T. Hannappel |
183-186 |
| A multiscale approach to the study of epitaxial film evolution during MOCVD |
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Alessandro Veneroni, Carlo Cavallotti, Maurizio Masi, Davide Moscatelli, Sergio Carrà |
191-194 |
| MOVPE growth studies of Mn-incorporated GaInAs/InP layers |
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S Hara, M Lampalzer, T. Torunski, K Volz, W Treutmann, W Stolz |
195-198 |
| Te co-doping and room temperature ferromagnetism in (MnGa)As-cluster layers by MOVPE |
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M. Lampalzer, K. Volz, S. Hara, W. Treutmann, S. Nau, T. Torunski, W. Stolz |
199-200 |
| Correlation of structure and magnetic properties of MOVPE grown (MnGa)As clusters in GaAs |
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k. Volz, M. Lampalzer, W. Treutmann, W Stolz |
201-202 |
| In-situ monitoring and analysis of GaSb (100) substrate deoxidation |
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K. Möller, L. Töben, Z. Kollonitsch, Ch. Giesen, M. Heuken, F. Willig, T. Hannappel |
203-208 |
| Indium accumulated layer control to sharp InGaAs/(AI)GaAs QW interfaces |
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A.A. Marmalyuk, A.V Petrovsky, O.I. Govorkov, D.B. Nikitin, A.A. Padalitsa, P.V. Bulaev, I.D. Zalevsky |
209-210 |
| Study of the interface properties in InGaP/GaAs multi quantum wells grown by Low-Pressure MOVPE from liquid sources |
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M. Begotti, M. Longo, R. Magnanini, A. Parisini, L. Tarricone, C. Bocchi, L. Lazzarini, L. Nasi, M. Geddo |
211-214 |
| Influence of substrate orientation on AIAs/GaAs distributed Bragg reflectors |
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V. Tasco, C. Pascali, M.A. Signore, I. Tarantini, A. Passaseo, R. Cingolani |
215-218 |
| MOVPE growth of AlGaAs/GaAs and InGaP/GaAs structures on patterned GaAs substrates |
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R. Kudela, P. Strinchovanec, D. Gregusova, V. Cambel, J. Soltys, S. Hasenhorl, J Novak, I. Kostic, G. Attolini, C. Pelosi |
219-222 |
| Experimental study of strain-compensated InGaAs-In(GaAl)As MQW structures for electroabsorption modulator applications |
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J. Decobert, C. Kazmierski, M. le Pallec, J.G. Provost, P. Pecci |
223-226 |
| Lasers with thin strained InAs layers in GaAs electro-optical characterisation and operation at elevated temperatures |
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A. Mackal, P. Hazdra, E. Hulicius, J. Oswald, J. Pangrác, K. Melichar, A. Hospodková, T. Simecek |
227-230 |
| MOVPE growth and properties of [111]A-oriented piezoelectric InGaAs/GaAs/AlGaAs highly strained quantum well laser structures |
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Jongseok Kim, Soohaeng Cho, A. Majerfeld, A. Sanz-Hervás, G. Patriarche, B. W. Kim |
231-234 |
| Effect of Al-content reduction in (AlGa)As cladding layers of MOVPE grown high-power laser diodes |
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Andrzej Malag, Anna Kozlowska, Marek Wesolowski |
235-238 |
| Comparison of AlGaAs and AlInP cladding layers for red edge-emitting lasers |
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M. Zorn, H. Wenzel, A. Knigge, U. Zeimer, M. Weyers |
239-242 |
| Lateral confinement optimisation of 1300 nm InGaAlAsP/InGaAsP Fabry-Perot lasers |
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Roberta Campi, J. Berggren, A. Buccieri, P. Gotta, G. Landgren, D. Sarocchi, P. Valenti |
243-246 |
| Optimization of highly strained InGaAs quantum wells for 1.3-µm vertical-cavity lasers |
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P. Sundgren, J. Berggren, M. Hammar |
247-250 |
| Surface morphology of active layers for VCSEL application |
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W. Strupinski, M. Wesolowski, A. Jasik |
251-254 |
| InAlGaAs/InP MQW structures grown by MOVPE in nitrogen atmosphere for 1.55 µm VCSELs |
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A. Mereuta, A. Mircea, A. Rudra, V. Iakovlev, A. Syrbu, G. Suruceanu, C.-A. Berseth, A. Caliman, K. Leifer, E. Kapon |
255-260 |
| Growth of strained cubic GaN on GaAs(100) by low-temperature MOVPE |
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J. Sormunen, J. Toivonen, M. Sopanen, H. Lipsanen |
261-262 |
| Growth of Silicon-doped GaN using ditertiarybutylsilane |
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C. J. Deatcher, C. Liu, M.G. Cheong, I.M. Watson, L. M. Smith, S. Rushworth, A. Widdowson |
263-266 |
| The effect of substrate nitridation temperature and buffer design on the quality of GaN epitaxial films |
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Maria Losurdo, Danilo Giuva, Pio Capezzuto, Gon Namkoong, Alan W. Doolittle, April Brown, Giovanni Bruno |
267-270 |
| Study of the interaction of atomic hydrogen with GaN surfaces monitored by spectroscopic ellipsometry |
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Maria Losurdo, Maria Michela Giangregorio, Danilo Giuva, Pio Capezzuto, Giovanni Bruno |
271-274 |
| Modeling and experimental analysis of GaN MOVPE in AIX 200 RF reactor |
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R.A. Talalaev, E.V. Yakovlev, Yu.N. Makarov, B.S. Yavich, W.N. Wang |
275-278 |
| Chemical aspects of the AIII nitride epitaxial growth by MOVPE |
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Leitner Jindrich, Stejskal Josef, Sofer Zdenek |
279-282 |
| On the mechanisms affecting aluminum transport and incorporation efficiency during AlGaN MOVPE |
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E.V. Yakovlev, R.A. Talalaev, A.N. Vorob’ev, Yu.N. Makarov |
283-286 |
| Characterisation of AlGaN epilayers on (0001) sapphire grown by LP-MOVPE |
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C. McAleese, M.J. Kappers, F.D.G. Rayment, D.M. Graham, P. Dawson, E.J. Thrush, C.J. Humphreys |
287-290 |
| The optical and electrical characterization of Si-doped AlGaN |
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G.R. James, A.W.R. Leitch, F. Omnès, M.C. Wagener |
291-294 |
| Dimethylhydrazine: a potential competitor for ammonia for the growth of GaInN structures? |
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V. Pérez-Solórzano, B. Santic, A. Gröning, M. Jetter, M. Seip, H. Schweizer, F. Scholz |
295-298 |
| Compositional studies of InGaN epilayers and magnesium-doped GaN grown by MOVPE, using wavelength dispersive X-ray spectrometry |
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C. J. Deatcher, C. Liu, M.G. Cheong, I.M. Watson, R. W. Martin, L. M. Smith, S. Rushworth, S. Pereira |
299-302 |
| A study of In incorporation in InGaN layers grown by atmospheric pressure MOVPE |
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Matteo Bosi, Roberto Fornari |
303-306 |
| Assessment of the short and long range homogeneity of MOVPE-grown InGaN epilayers |
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R. Fornari, M. Bosi, M. Avella, O. Martinez, J. Jimenez |
307-310 |
| Modeling analysis of GaN/InGaN deposition in MOCVD vertical rotating disk reactors |
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L. Kadinski, V. Merai, A. Parekh, J. Ramer, E. Armour, R. Stall, A. Gurary, A. Galyukov, Yu. Makarov |
311-314 |
| Novel three dimensional Ga structures on GaAs (100) substrates obtained by MOVPE |
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M. Sacilotti, L. Imhoff, S. Bourgeois, C. Dumas, M. Mesnier, C. Josse Courty, Th. Chiaramonte, L. Cardoso, J. Decobert |
315-320 |
| Strain studies on GaN-based structures on SiC |
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A. Ivanov, V. Dumitru, G. Moutchnik, H. Schweizer, F. Scholz |
321-324 |
| Strain engineering during MOVPE growth of GaN on Si(111) |
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A. Dadgar, G. Straßburger, J. Bläsing, T. Riemann, U. Haboeck, P. Veit, O. Contreras, A. Diez, F.A. Ponce, A. Hoffmann, J. Christen, A. Krost |
325-326 |
| In-plane strain anisotropy and lattice parameters of GaN films grown on a-plane sapphire by metalorganic vapor phase epitaxy |
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V. Darakchieva, P.P. Paskov, T. Paskova, M. Heuken, B. Monemar |
327-330 |
| Reduction of dislocation density and dislocation analysis of MOVPE grown GaN layers |
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Frank Habel, Matthias Seyboth |
331-334 |
| Reduction of threading dislocations density in GaN on sapphire by in-situ SixNy interlayer |
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K. Pakula, R. Bozek, M. Kowalska, E. Zielinska-Rohozinska, J.M. Baranowski |
335-338 |
| Microstructure evolution in MOVPE-grown AlN/GaN superlattices with different periods |
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E. Valcheva, T. Paskova, G. Radnoczi, L. Hultman, B. Monemar, H. Amano, I. Akasaki |
339-342 |
| Reduction of dislocation density using in situ deposited SiNx intermediate layers in AlGaN/GaN heterostructures grown by MOVPE on SiC substrates |
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S. Miller, H.-J. Lugauer, S. Bader, G. Brüderl, U. Strauss, A. Lell, V. Härle, K. Engl, M. Beer |
343-346 |
| Growth and properties of InN/Al2O3 and InN/GaN/Al2O3 studied by in situ Spectroscopic Ellipsometry and different ex situ techniques |
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M. Drago, U. W. Pohl, T. Schmidtling, W. Richter |
347-350 |
| Electron transport in MOVPE grown InGaN/GaN MQW in moderate magnetic field |
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B. Arnaudov, T. Paskova, O. Valassiades, S. Evtimova, P. P. Paskov, B. Monemar, M. Heuken |
351-354 |
| Growth optimisation of GaInN/GaN MQW RCLED structures. Device performances and reliability |
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M.A. Di Forte-Poisson, A. Romann, M. Tordjman, R. Aubry, M. Magis, J. Di Persio, P. Maaskant, B. Corbett |
355-358 |
| Blue-laser MOVPE structures grown on bulk GaN crystals |
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P. Prystawko, R. Czernetzki, K. Krowicki, G. Targowski, M. Sarzynski, M. Leszczynski, P. Perlin, T. Suski, P. Wisniewski, I. Grzegory |
359-362 |
| Growth of buffer structures for AlGaN/GaN HEMT on silicon substrates |
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Y. Dikme, H. Kalisch, M. Fieger, H.M. Chern, A. Szymakowski, P. Javorka, M. Marso, N. Kaluza, R.H. Jansen, M. Heuken |
363-366 |
| The growth of AlGaN/GaN HEMT structures in large scale Planetary Reactors such as the AIX 2600G3 HT in 8x4 inch configuration |
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Oliver Schoen, Assadullah Alam, Bernd Schineller, Michael Heuken |
367-370 |
| AlGaN/GaN HFET including a thin AlN carrier exclusion layer |
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R.S. Balmer, D.E.J Soley, K.P. Hilton, K.J. Nash, M.J. Uren, A. Wells, M. Missous, T. Martin |
371-374 |
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e-ISBN: 88-8305-008-8
